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NTMS4935N
TYPICAL PERFORMANCE CURVES
4500
4000
3500
C iss
T J = 25 ° C
V GS = 0 V
10
9
8
QT
3000
2500
2000
1500
1000
500
0
0
C rss
5 10
15
C oss
20
25
30
7
6
5
4
3
2
1
0
0
Q GS
5
Q GD
10 15
20 25
30 35
V GS
40 45
V GS = 10 V
I D = 7.5 A
T J = 25 ° C
50 55 60
1000
DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage vs. Total Charge
100
V DD = 15 V
I D = 1 A
V GS = 10 V
t d(off)
t f
1.5
V GS = 0 V
T J = 25 ° C
t d(on)
1
10
t r
0.5
1
1
10
100
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
1000
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
130
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
100
10
10 m s
100 m s
120
110
100
90
80
70
I D = 16 A
1
0.1
0.01
0.01
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
1 ms
10 ms
dc
100
60
50
40
30
20
10
0
25
50 75 100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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